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Journal Abstract Search

203 related items for PubMed ID: 35621055

  • 1. Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy.
    Shelukhin LA, Gareev RR, Zbarsky V, Walowski J, Münzenberg M, Pertsev NA, Kalashnikova AM.
    Nanoscale; 2022 Jun 09; 14(22):8153-8162. PubMed ID: 35621055
    [Abstract] [Full Text] [Related]

  • 2. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
    Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan HD, Endo M, Kanai S, Hayakawa J, Matsukura F, Ohno H.
    Nat Mater; 2010 Sep 09; 9(9):721-4. PubMed ID: 20622862
    [Abstract] [Full Text] [Related]

  • 3. Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory.
    Iwata-Harms JM, Jan G, Serrano-Guisan S, Thomas L, Liu H, Zhu J, Lee YJ, Le S, Tong RY, Patel S, Sundar V, Shen D, Yang Y, He R, Haq J, Teng Z, Lam V, Liu P, Wang YJ, Zhong T, Fukuzawa H, Wang PK.
    Sci Rep; 2019 Dec 19; 9(1):19407. PubMed ID: 31857596
    [Abstract] [Full Text] [Related]

  • 4. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy.
    Liu T, Zhang Y, Cai JW, Pan HY.
    Sci Rep; 2014 Jul 31; 4():5895. PubMed ID: 25081387
    [Abstract] [Full Text] [Related]

  • 5. Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame.
    Kim JH, Lee JB, An GG, Yang SM, Chung WS, Park HS, Hong JP.
    Sci Rep; 2015 Nov 20; 5():16903. PubMed ID: 26584638
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  • 7. Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions.
    Miura K, Yabuuchi S, Yamada M, Ichimura M, Rana B, Ogawa S, Takahashi H, Fukuma Y, Otani Y.
    Sci Rep; 2017 Feb 17; 7():42511. PubMed ID: 28209976
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  • 9. Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy.
    Pertsev NA.
    Sci Rep; 2013 Sep 25; 3():2757. PubMed ID: 24067783
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  • 11. Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20\MgO Films.
    Chen PJ, Iunin YL, Cheng SF, Shull RD.
    IEEE Trans Magn; 2016 Jul 25; 52(7):. PubMed ID: 27499549
    [Abstract] [Full Text] [Related]

  • 12. Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes.
    Avilés-Félix L, Olivier A, Li G, Davies CS, Álvaro-Gómez L, Rubio-Roy M, Auffret S, Kirilyuk A, Kimel AV, Rasing T, Buda-Prejbeanu LD, Sousa RC, Dieny B, Prejbeanu IL.
    Sci Rep; 2020 Mar 23; 10(1):5211. PubMed ID: 32251329
    [Abstract] [Full Text] [Related]

  • 13. Magnetization dynamics at finite temperature in CoFeB-MgO based MTJs.
    Sampan-A-Pai S, Phoomatna R, Boonruesi W, Meo A, Chureemart J, Evans RFL, Chantrell RW, Chureemart P.
    Sci Rep; 2023 Feb 14; 13(1):2637. PubMed ID: 36788254
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  • 14. Effect of second-order magnetic anisotropy on nonlinearity of conductance in CoFeB/MgO/CoFeB magnetic tunnel junction for magnetic sensor devices.
    Ogasawara T, Oogane M, Al-Mahdawi M, Tsunoda M, Ando Y.
    Sci Rep; 2019 Nov 19; 9(1):17018. PubMed ID: 31745142
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  • 16. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions.
    Lee DY, Shim TH, Park JG.
    Nanotechnology; 2016 Jul 22; 27(29):295705. PubMed ID: 27292593
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  • 18. Understanding stability diagram of perpendicular magnetic tunnel junctions.
    Skowroński W, Czapkiewicz M, Ziętek S, Chęciński J, Frankowski M, Rzeszut P, Wrona J.
    Sci Rep; 2017 Aug 31; 7(1):10172. PubMed ID: 28860571
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  • 19. Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications.
    Kaidatzis A, Gopman DB, Bran C, García-Martín JM, Vázquez M, Niarchos D.
    J Magn Magn Mater; 2018 Aug 31; 473():. PubMed ID: 33060887
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