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Journal Abstract Search

142 related items for PubMed ID: 36673222

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  • 3. Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage.
    Meyer M, Déprez C, Meijer IN, Unseld FK, Karwal S, Sammak A, Scappucci G, Vandersypen LMK, Veldhorst M.
    Nano Lett; 2023 Dec 27; 23(24):11593-11600. PubMed ID: 38091376
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  • 5. Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.
    Crippa A, Maurand R, Kotekar-Patil D, Corna A, Bohuslavskyi H, Orlov AO, Fay P, Laviéville R, Barraud S, Vinet M, Sanquer M, De Franceschi S, Jehl X.
    Nano Lett; 2017 Feb 08; 17(2):1001-1006. PubMed ID: 28080065
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  • 6. High-fidelity gates in quantum dot spin qubits.
    Koh TS, Coppersmith SN, Friesen M.
    Proc Natl Acad Sci U S A; 2013 Dec 03; 110(49):19695-700. PubMed ID: 24255105
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  • 12. Universal set of quantum gates for double-dot spin qubits with fixed interdot coupling.
    Hanson R, Burkard G.
    Phys Rev Lett; 2007 Feb 02; 98(5):050502. PubMed ID: 17358835
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  • 13. Two-qubit gate of combined single-spin rotation and interdot spin exchange in a double quantum dot.
    Brunner R, Shin YS, Obata T, Pioro-Ladrière M, Kubo T, Yoshida K, Taniyama T, Tokura Y, Tarucha S.
    Phys Rev Lett; 2011 Sep 30; 107(14):146801. PubMed ID: 22107226
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  • 14. Gate-based single-shot readout of spins in silicon.
    West A, Hensen B, Jouan A, Tanttu T, Yang CH, Rossi A, Gonzalez-Zalba MF, Hudson F, Morello A, Reilly DJ, Dzurak AS.
    Nat Nanotechnol; 2019 May 30; 14(5):437-441. PubMed ID: 30858520
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  • 15. Local gate control of a carbon nanotube double quantum dot.
    Mason N, Biercuk MJ, Marcus CM.
    Science; 2004 Jan 30; 303(5658):655-8. PubMed ID: 14752156
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  • 17. Aharonov-Bohm oscillations changed by indirect interdot tunneling via electrodes in parallel-coupled vertical double quantum dots.
    Hatano T, Kubo T, Tokura Y, Amaha S, Teraoka S, Tarucha S.
    Phys Rev Lett; 2011 Feb 18; 106(7):076801. PubMed ID: 21405529
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  • 18. A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires.
    Wang X, Huang S, Wang JY, Pan D, Zhao J, Xu HQ.
    Nanoscale; 2021 Jan 21; 13(2):1048-1054. PubMed ID: 33393583
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  • 20. Electrical control of interdot electron tunneling in a double InGaAs quantum-dot nanostructure.
    Müller K, Bechtold A, Ruppert C, Zecherle M, Reithmaier G, Bichler M, Krenner HJ, Abstreiter G, Holleitner AW, Villas-Boas JM, Betz M, Finley JJ.
    Phys Rev Lett; 2012 May 11; 108(19):197402. PubMed ID: 23003087
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