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Journal Abstract Search

200 related items for PubMed ID: 36795912

  • 21. Enhanced valleytronic properties in germanene by direct proximity to heavy metal layer.
    Qu J, Luo C, Peng X, Chen G, Guo S, Zhong J.
    J Phys Condens Matter; 2020 Mar 03; 33(9):095502. PubMed ID: 33237882
    [Abstract] [Full Text] [Related]

  • 22. Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer.
    Chang Y, Zhang Z, Deng L, Wu Y, Zhang X.
    Materials (Basel); 2024 Jul 05; 17(13):. PubMed ID: 38998413
    [Abstract] [Full Text] [Related]

  • 23. Enhanced Valley Polarization in WS2 /LaMnO3 Heterostructure.
    Dang J, Yang M, Xie X, Yang Z, Dai D, Zuo Z, Wang C, Jin K, Xu X.
    Small; 2022 Mar 05; 18(10):e2106029. PubMed ID: 35266315
    [Abstract] [Full Text] [Related]

  • 24. Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures.
    Singh S, Gong W, Stevens CE, Hou J, Singh A, Zhang H, Anantharaman SB, Mohite AD, Hendrickson JR, Yan Q, Jariwala D.
    ACS Nano; 2023 Apr 25; 17(8):7487-7497. PubMed ID: 37010369
    [Abstract] [Full Text] [Related]

  • 25. Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction.
    Sanchez OL, Ovchinnikov D, Misra S, Allain A, Kis A.
    Nano Lett; 2016 Sep 14; 16(9):5792-7. PubMed ID: 27575518
    [Abstract] [Full Text] [Related]

  • 26. The magnetic proximity effect and electrical field tunable valley degeneracy in MoS2/EuS van der Waals heterojunctions.
    Liang X, Deng L, Huang F, Tang T, Wang C, Zhu Y, Qin J, Zhang Y, Peng B, Bi L.
    Nanoscale; 2017 Jul 13; 9(27):9502-9509. PubMed ID: 28660948
    [Abstract] [Full Text] [Related]

  • 27. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
    Heine T.
    Acc Chem Res; 2015 Jan 20; 48(1):65-72. PubMed ID: 25489917
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  • 28. Prediction of a new two-dimensional valleytronic semiconductor MoGe2P4 with large valley spin splitting.
    Li Y, Xu X, Lan M, Wang S, Huang T, Wu H, Li F, Pu Y.
    Phys Chem Chem Phys; 2022 Nov 02; 24(42):25962-25968. PubMed ID: 36263721
    [Abstract] [Full Text] [Related]

  • 29. Highly-Tunable Intrinsic Room-Temperature Ferromagnetism in 2D van der Waals Semiconductor Crx Ga1- x Te.
    Zhang G, Wu H, Zhang L, Zhang S, Yang L, Gao P, Wen X, Jin W, Guo F, Xie Y, Li H, Tao B, Zhang W, Chang H.
    Adv Sci (Weinh); 2022 Jan 02; 9(1):e2103173. PubMed ID: 34705336
    [Abstract] [Full Text] [Related]

  • 30. Directional interlayer spin-valley transfer in two-dimensional heterostructures.
    Schaibley JR, Rivera P, Yu H, Seyler KL, Yan J, Mandrus DG, Taniguchi T, Watanabe K, Yao W, Xu X.
    Nat Commun; 2016 Dec 14; 7():13747. PubMed ID: 27966524
    [Abstract] [Full Text] [Related]

  • 31. Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS2 by proximity coupling with a ferromagnetic MnO2 monolayer.
    Zhou B, Li Z, Wang J, Niu X, Luan C.
    Nanoscale; 2019 Jul 28; 11(28):13567-13575. PubMed ID: 31290895
    [Abstract] [Full Text] [Related]

  • 32. Manipulation of Valley Pseudospin by Selective Spin Injection in Chiral Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures.
    Chen Y, Ma J, Liu Z, Li J, Duan X, Li D.
    ACS Nano; 2020 Nov 24; 14(11):15154-15160. PubMed ID: 33108721
    [Abstract] [Full Text] [Related]

  • 33. Electrical control of the valley Hall effect in bilayer MoS2 transistors.
    Lee J, Mak KF, Shan J.
    Nat Nanotechnol; 2016 May 24; 11(5):421-5. PubMed ID: 26809056
    [Abstract] [Full Text] [Related]

  • 34. Spin-valley locking and bulk quantum Hall effect in a noncentrosymmetric Dirac semimetal BaMnSb2.
    Liu JY, Yu J, Ning JL, Yi HM, Miao L, Min LJ, Zhao YF, Ning W, Lopez KA, Zhu YL, Pillsbury T, Zhang YB, Wang Y, Hu J, Cao HB, Chakoumakos BC, Balakirev F, Weickert F, Jaime M, Lai Y, Yang K, Sun JW, Alem N, Gopalan V, Chang CZ, Samarth N, Liu CX, McDonald RD, Mao ZQ.
    Nat Commun; 2021 Jul 01; 12(1):4062. PubMed ID: 34210963
    [Abstract] [Full Text] [Related]

  • 35. Valleytronics in bulk MoS2 with a topologic optical field.
    Tyulnev I, Jiménez-Galán Á, Poborska J, Vamos L, Russell PSJ, Tani F, Smirnova O, Ivanov M, Silva REF, Biegert J.
    Nature; 2024 Apr 01; 628(8009):746-751. PubMed ID: 38658682
    [Abstract] [Full Text] [Related]

  • 36. Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z = N, P, As) monolayers.
    Liu MY, Li GQ, He Y, Xiong K.
    Phys Chem Chem Phys; 2024 Jan 17; 26(3):2341-2354. PubMed ID: 38165967
    [Abstract] [Full Text] [Related]

  • 37. Influence of electronic correlation on the valley and topological properties of VSiGeP4 monolayer.
    Fan G, Wu Y, Tong J, Deng L, Yin X, Tian F, Zhang X.
    Phys Chem Chem Phys; 2024 Mar 20; 26(12):9628-9635. PubMed ID: 38466239
    [Abstract] [Full Text] [Related]

  • 38. Two dimensional Janus RuXY (X, Y = Br, Cl, F, I, X ≠ Y) monolayers: ferromagnetic semiconductors with spontaneous valley polarization and tunable magnetic anisotropy.
    Liu Z, Zhou B, Wang X, Mi W.
    Phys Chem Chem Phys; 2023 Sep 27; 25(37):25146-25156. PubMed ID: 37712230
    [Abstract] [Full Text] [Related]

  • 39. Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations.
    Li J, Chen YQ, Yuan HK, Tian CL.
    Nanoscale; 2024 Oct 10; 16(39):18504-18517. PubMed ID: 39267610
    [Abstract] [Full Text] [Related]

  • 40. Controlling Exciton and Valley Dynamics in Two-Dimensional Heterostructures with Atomically Precise Interlayer Proximity.
    Zhou H, Zhao Y, Tao W, Li Y, Zhou Q, Zhu H.
    ACS Nano; 2020 Apr 28; 14(4):4618-4625. PubMed ID: 32181635
    [Abstract] [Full Text] [Related]

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