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Journal Abstract Search

187 related items for PubMed ID: 37630930

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  • 2. Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors.
    Lee HA, Yatsu K, Kim TI, Kwon HI, Park IJ.
    ACS Appl Mater Interfaces; 2022 Dec 21; 14(50):56416-56426. PubMed ID: 36503237
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  • 4. Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel.
    Lei L, Tan Y, Yuan X, Dou W, Zhang J, Wang Y, Zeng S, Deng S, Guo H, Zhou W, Tang D.
    RSC Adv; 2021 May 13; 11(29):17910-17913. PubMed ID: 35480189
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  • 9. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH, Cho WJ.
    J Nanosci Nanotechnol; 2020 Aug 01; 20(8):4671-4677. PubMed ID: 32126639
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  • 13. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.
    Cai W, Ma X, Zhang J, Song A.
    Materials (Basel); 2017 Apr 20; 10(4):. PubMed ID: 28772789
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  • 19. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors.
    Ko JB, Cho SI, Park SK.
    ACS Appl Mater Interfaces; 2023 Oct 11; 15(40):47799-47809. PubMed ID: 37769061
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