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Journal Abstract Search

229 related items for PubMed ID: 37769061

  • 21. Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.
    Seo JS, Bae BS.
    ACS Appl Mater Interfaces; 2014 Sep 10; 6(17):15335-43. PubMed ID: 25116128
    [Abstract] [Full Text] [Related]

  • 22. Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses.
    Wang D, Furuta M, Tomai S, Yano K.
    Nanomaterials (Basel); 2020 Mar 27; 10(4):. PubMed ID: 32230775
    [Abstract] [Full Text] [Related]

  • 23. Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor.
    Chang Y, Bukke RN, Bae J, Jang J.
    Nanomaterials (Basel); 2023 Aug 25; 13(17):. PubMed ID: 37686917
    [Abstract] [Full Text] [Related]

  • 24. Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.
    Ahn CH, Senthil K, Cho HK, Lee SY.
    Sci Rep; 2013 Aug 25; 3():2737. PubMed ID: 24061388
    [Abstract] [Full Text] [Related]

  • 25. Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways.
    Park JM, Lee H, Lee G, Jang SC, Chang YH, Hong H, Chung KB, Lee KJ, Kim DH, Kim HS.
    ACS Appl Mater Interfaces; 2023 Jan 11; 15(1):1525-1534. PubMed ID: 36538477
    [Abstract] [Full Text] [Related]

  • 26. Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties.
    Nam Y, Kim HO, Cho SH, Ko Park SH.
    RSC Adv; 2018 Jan 29; 8(10):5622-5628. PubMed ID: 35542402
    [Abstract] [Full Text] [Related]

  • 27. Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.
    Krausmann J, Sanctis S, Engstler J, Luysberg M, Bruns M, Schneider JJ.
    ACS Appl Mater Interfaces; 2018 Jun 20; 10(24):20661-20671. PubMed ID: 29888585
    [Abstract] [Full Text] [Related]

  • 28. Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition.
    Sheng J, Han JH, Choi WH, Park J, Park JS.
    ACS Appl Mater Interfaces; 2017 Dec 13; 9(49):42928-42934. PubMed ID: 29161024
    [Abstract] [Full Text] [Related]

  • 29. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis.
    Bukke RN, Saha JK, Mude NN, Kim Y, Lee S, Jang J.
    ACS Appl Mater Interfaces; 2020 Aug 05; 12(31):35164-35174. PubMed ID: 32657115
    [Abstract] [Full Text] [Related]

  • 30. Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.
    Bae SH, Yang JH, Kim YH, Kwon YH, Seong NJ, Choi KJ, Hwang CS, Yoon SM.
    ACS Appl Mater Interfaces; 2022 Jul 13; 14(27):31010-31023. PubMed ID: 35785988
    [Abstract] [Full Text] [Related]

  • 31. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
    Choi S, Song S, Kim T, Shin JC, Jo JW, Park SK, Kim YH.
    Micromachines (Basel); 2020 Nov 25; 11(12):. PubMed ID: 33255690
    [Abstract] [Full Text] [Related]

  • 32. Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors.
    Napari M, Huq TN, Meeth DJ, Heikkilä MJ, Niang KM, Wang H, Iivonen T, Wang H, Leskelä M, Ritala M, Flewitt AJ, Hoye RLZ, MacManus-Driscoll JL.
    ACS Appl Mater Interfaces; 2021 Jan 27; 13(3):4156-4164. PubMed ID: 33443398
    [Abstract] [Full Text] [Related]

  • 33. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide.
    Park JH, Shin MH, Yi JS.
    Nanomaterials (Basel); 2019 May 22; 9(5):. PubMed ID: 31121917
    [Abstract] [Full Text] [Related]

  • 34. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
    J Nanosci Nanotechnol; 2021 Mar 01; 21(3):1748-1753. PubMed ID: 33404442
    [Abstract] [Full Text] [Related]

  • 35. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH, Cho WJ.
    J Nanosci Nanotechnol; 2020 Aug 01; 20(8):4671-4677. PubMed ID: 32126639
    [Abstract] [Full Text] [Related]

  • 36. Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors.
    Lee Y, Nam T, Seo S, Yoon H, Oh IK, Lee CH, Yoo H, Kim HJ, Choi W, Im S, Yang JY, Choi DW, Yoo C, Kim HJ, Kim H.
    ACS Appl Mater Interfaces; 2021 May 05; 13(17):20349-20360. PubMed ID: 33818057
    [Abstract] [Full Text] [Related]

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  • 38. Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V-1 s-1 and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays.
    Rabbi MH, Lee S, Sasaki D, Kawashima E, Tsuruma Y, Jang J.
    Small Methods; 2022 Sep 05; 6(9):e2200668. PubMed ID: 35879024
    [Abstract] [Full Text] [Related]

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