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Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

191 related items for PubMed ID: 37872061

  • 1. Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories.
    Pan ZC, Li D, Ye XG, Chen Z, Chen ZH, Wang AQ, Tian M, Yao G, Liu K, Liao ZM.
    Sci Bull (Beijing); 2023 Nov 30; 68(22):2743-2749. PubMed ID: 37872061
    [Abstract] [Full Text] [Related]

  • 2. All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing.
    Lin H, Luo X, Liu L, Wang D, Zhao X, Wang Z, Xue X, Zhang F, Xing G.
    Micromachines (Basel); 2022 Feb 18; 13(2):. PubMed ID: 35208443
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  • 8. Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe3GaTe2 Devices.
    Deng Y, Wang M, Xiang Z, Zhu K, Hu T, Lu L, Wang Y, Ma Y, Lei B, Chen X.
    Nano Lett; 2024 Jul 31; 24(30):9302-9310. PubMed ID: 39017705
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  • 9. Two-dimensional materials prospects for non-volatile spintronic memories.
    Yang H, Valenzuela SO, Chshiev M, Couet S, Dieny B, Dlubak B, Fert A, Garello K, Jamet M, Jeong DE, Lee K, Lee T, Martin MB, Kar GS, Sénéor P, Shin HJ, Roche S.
    Nature; 2022 Jun 31; 606(7915):663-673. PubMed ID: 35732761
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  • 11. Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity.
    Wang F, Shi G, Kim KW, Park HJ, Jang JG, Tan HR, Lin M, Liu Y, Kim T, Yang D, Zhao S, Lee K, Yang S, Soumyanarayanan A, Lee KJ, Yang H.
    Nat Mater; 2024 Jun 31; 23(6):768-774. PubMed ID: 38243113
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  • 12. Highly Efficient Room-Temperature Nonvolatile Magnetic Switching by Current in Fe3GaTe2 Thin Flakes.
    Yan S, Tian S, Fu Y, Meng F, Li Z, Lei H, Wang S, Zhang X.
    Small; 2024 Jun 31; 20(23):e2311430. PubMed ID: 38444270
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  • 13. First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals Heterostructures.
    Wang J, Nikonov DE, Lin H, Kang D, Kim R, Li H, Klimeck G.
    Small; 2024 Aug 31; 20(33):e2308965. PubMed ID: 38693077
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  • 14. Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions.
    Jin W, Zhang G, Wu H, Yang L, Zhang W, Chang H.
    Nanoscale; 2023 Mar 16; 15(11):5371-5378. PubMed ID: 36820813
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  • 15. Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium.
    Liu Y, Zhou B, Zhu JJ.
    Sci Rep; 2019 Jan 23; 9(1):325. PubMed ID: 30674984
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  • 16. Proximity-Induced Tunable Magnetic Order at the Interface of All-van der Waals-Layered Heterostructures.
    Choi EM, Kim T, Cho BW, Lee YH.
    ACS Nano; 2023 Aug 22; 17(16):15656-15665. PubMed ID: 37523780
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  • 17. Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure.
    Shin I, Cho WJ, An ES, Park S, Jeong HW, Jang S, Baek WJ, Park SY, Yang DH, Seo JH, Kim GY, Ali MN, Choi SY, Lee HW, Kim JS, Kim SD, Lee GH.
    Adv Mater; 2022 Feb 22; 34(8):e2101730. PubMed ID: 34908193
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  • 18. Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures.
    Tang W, Liu H, Li Z, Pan A, Zeng YJ.
    Adv Sci (Weinh); 2021 Sep 22; 8(18):e2100847. PubMed ID: 34323390
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  • 19. Low-Power and Field-Free Perpendicular Magnetic Memory Driven by Topological Insulators.
    Cui B, Chen A, Zhang X, Fang B, Zeng Z, Zhang P, Zhang J, He W, Yu G, Yan P, Han X, Wang KL, Zhang X, Wu H.
    Adv Mater; 2023 Aug 22; 35(31):e2302350. PubMed ID: 37141542
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  • 20. Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures.
    Lohmann M, Wickramaratne D, Moon J, Noyan M, Chuang HJ, Jonker BT, Li CH.
    ACS Nano; 2024 Jan 09; 18(1):680-690. PubMed ID: 38109771
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