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122 related items for PubMed ID: 37997047
1. Impacts of defects on the mechanical and thermal properties of SiC and GeC monolayers. Ren K, Huang L, Shu H, Zhang G, Mu W, Zhang H, Qin H, Zhang G. Phys Chem Chem Phys; 2023 Dec 06; 25(47):32378-32386. PubMed ID: 37997047 [Abstract] [Full Text] [Related]
2. Vacancy-induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study. Islam ASMJ, Islam MS, Ferdous N, Park J, Hashimoto A. Phys Chem Chem Phys; 2020 Jun 24; 22(24):13592-13602. PubMed ID: 32515451 [Abstract] [Full Text] [Related]
3. Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN. Hwang T, Lee PC, Kummel AC, Cho K. ACS Appl Mater Interfaces; 2024 Oct 02; 16(39):53098-53105. PubMed ID: 39287622 [Abstract] [Full Text] [Related]
4. First-principles study of SiC and GeC monolayers with adsorbed non-metal atoms. Ha CV, Ha LT, Hue DT, Nguyen DK, Anh DT, Guerrero-Sanchez J, Hoat DM. RSC Adv; 2023 May 15; 13(22):14879-14886. PubMed ID: 37200697 [Abstract] [Full Text] [Related]
5. Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study. Luo M, Yu B, Xu YE. Micromachines (Basel); 2019 May 08; 10(5):. PubMed ID: 31071940 [Abstract] [Full Text] [Related]
6. Atomic Structure and Dynamics of Defects and Grain Boundaries in 2D Pd2Se3 Monolayers. Chen J, Ryu GH, Sinha S, Warner JH. ACS Nano; 2019 Jul 23; 13(7):8256-8264. PubMed ID: 31241313 [Abstract] [Full Text] [Related]
7. Versatile mechanical properties of novel g-SiC x monolayers from graphene to silicene: a first-principles study. Lu XK, Xin TY, Zhang Q, Xu Q, Wei TH, Wang YX. Nanotechnology; 2018 Aug 03; 29(31):315701. PubMed ID: 29741157 [Abstract] [Full Text] [Related]
8. Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide. Gao C, Yang X, Jiang M, Chen L, Chen Z, Singh CV. Phys Chem Chem Phys; 2021 Sep 15; 23(35):19525-19536. PubMed ID: 34524293 [Abstract] [Full Text] [Related]
9. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Cheng Z, Liang J, Kawamura K, Zhou H, Asamura H, Uratani H, Tiwari J, Graham S, Ohno Y, Nagai Y, Feng T, Shigekawa N, Cahill DG. Nat Commun; 2022 Nov 23; 13(1):7201. PubMed ID: 36418359 [Abstract] [Full Text] [Related]
10. Effect of Metal Doping and Vacancies on the Thermal Conductivity of Monolayer Molybdenum Diselenide. Yarali M, Brahmi H, Yan Z, Li X, Xie L, Chen S, Kumar S, Yoon M, Xiao K, Mavrokefalos A. ACS Appl Mater Interfaces; 2018 Feb 07; 10(5):4921-4928. PubMed ID: 29322775 [Abstract] [Full Text] [Related]
11. First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements. Sun Z, Yuan K, Zhang X, Tang D. Phys Chem Chem Phys; 2019 Mar 13; 21(11):6011-6020. PubMed ID: 30810132 [Abstract] [Full Text] [Related]
12. Nonmonotonic strain dependence of lattice thermal conductivity in monolayer SiC: a first-principles study. Guo SD, Dong J, Liu JT. Phys Chem Chem Phys; 2018 Aug 29; 20(34):22038-22046. PubMed ID: 30112534 [Abstract] [Full Text] [Related]
13. Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC. Ma G, Xiao X, Meng B, Ma Y, Xing X, Wang X, Mu F, Yuan C. ACS Appl Mater Interfaces; 2024 Apr 10. PubMed ID: 38598525 [Abstract] [Full Text] [Related]
14. Interfacial Defect Vibrations Enhance Thermal Transport in Amorphous Multilayers with Ultrahigh Thermal Boundary Conductance. Giri A, King SW, Lanford WA, Mei AB, Merrill D, Li L, Oviedo R, Richards J, Olson DH, Braun JL, Gaskins JT, Deangelis F, Henry A, Hopkins PE. Adv Mater; 2018 Nov 10; 30(44):e1804097. PubMed ID: 30222218 [Abstract] [Full Text] [Related]
15. Mechanical and Electronic Properties of Al(111)/6H-SiC Interfaces: A DFT Study. Fathalian M, Postek E, Sadowski T. Molecules; 2023 May 25; 28(11):. PubMed ID: 37298818 [Abstract] [Full Text] [Related]
16. Lattice thermal conductivity of Janus MoSSe and WSSe monolayers. Qin H, Ren K, Zhang G, Dai Y, Zhang G. Phys Chem Chem Phys; 2022 Aug 31; 24(34):20437-20444. PubMed ID: 35983909 [Abstract] [Full Text] [Related]
20. Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide. Yu J, Dai X, Li J, Luo A, Ouyang Y, Zhou Y. Materials (Basel); 2023 Dec 27; 17(1):. PubMed ID: 38204006 [Abstract] [Full Text] [Related] Page: [Next] [New Search]