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Journal Abstract Search
128 related items for PubMed ID: 38063766
1. Possibilities of Controlling the Quantum States of Hole Qubits in an Ultrathin Germanium Layer Using a Magnetic Substrate: Results from ab Initio Calculations. Chibisov AN, Chibisova MA, Prokhorenko AV, Obrazcov KV, Fedorov AS, Yu YX. Nanomaterials (Basel); 2023 Dec 03; 13(23):. PubMed ID: 38063766 [Abstract] [Full Text] [Related]
2. DFT Analysis of Hole Qubits Spin State in Germanium Thin Layer. Chibisov A, Aleshin M, Chibisova M. Nanomaterials (Basel); 2022 Jun 29; 12(13):. PubMed ID: 35808079 [Abstract] [Full Text] [Related]
6. Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit. Liu H, Wang K, Gao F, Leng J, Liu Y, Zhou YC, Cao G, Wang T, Zhang J, Huang P, Li HO, Guo GP. Nano Lett; 2023 May 10; 23(9):3810-3817. PubMed ID: 37098786 [Abstract] [Full Text] [Related]
9. Ultrafast coherent control of a hole spin qubit in a germanium quantum dot. Wang K, Xu G, Gao F, Liu H, Ma RL, Zhang X, Wang Z, Cao G, Wang T, Zhang JJ, Culcer D, Hu X, Jiang HW, Li HO, Guo GC, Guo GP. Nat Commun; 2022 Jan 11; 13(1):206. PubMed ID: 35017522 [Abstract] [Full Text] [Related]
10. A singlet-triplet hole spin qubit in planar Ge. Jirovec D, Hofmann A, Ballabio A, Mutter PM, Tavani G, Botifoll M, Crippa A, Kukucka J, Sagi O, Martins F, Saez-Mollejo J, Prieto I, Borovkov M, Arbiol J, Chrastina D, Isella G, Katsaros G. Nat Mater; 2021 Aug 11; 20(8):1106-1112. PubMed ID: 34083775 [Abstract] [Full Text] [Related]
16. Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform. Jin IK, Kumar K, Rendell MJ, Huang JY, Escott CC, Hudson FE, Lim WH, Dzurak AS, Hamilton AR, Liles SD. Nano Lett; 2023 Feb 22; 23(4):1261-1266. PubMed ID: 36748989 [Abstract] [Full Text] [Related]
17. Fully Tunable Longitudinal Spin-Photon Interactions in Si and Ge Quantum Dots. Bosco S, Scarlino P, Klinovaja J, Loss D. Phys Rev Lett; 2022 Aug 05; 129(6):066801. PubMed ID: 36018647 [Abstract] [Full Text] [Related]
18. Sulfur Adatom and Vacancy Accelerate Charge Recombination in MoS2 but by Different Mechanisms: Time-Domain Ab Initio Analysis. Li L, Long R, Bertolini T, Prezhdo OV. Nano Lett; 2017 Dec 13; 17(12):7962-7967. PubMed ID: 29172545 [Abstract] [Full Text] [Related]