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Journal Abstract Search

140 related items for PubMed ID: 38100676

  • 1. A Novel Ferroelectric Rashba Semiconductor.
    Krizman G, Zakusylo T, Sajeev L, Hajlaoui M, Takashiro T, Rosmus M, Olszowska N, Kołodziej JJ, Bauer G, Caha O, Springholz G.
    Adv Mater; 2024 Mar; 36(13):e2310278. PubMed ID: 38100676
    [Abstract] [Full Text] [Related]

  • 2. Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric α-GeTe(111).
    Kremer G, Maklar J, Nicolaï L, Nicholson CW, Yue C, Silva C, Werner P, Dil JH, Krempaský J, Springholz G, Ernstorfer R, Minár J, Rettig L, Monney C.
    Nat Commun; 2022 Oct 27; 13(1):6396. PubMed ID: 36302853
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  • 7. Nonvolatile Electric Control of Rashba Spin Splitting in Sb/In2Se3 Heterostructure.
    Cheng H, Sun X, Zhou J, Wang S, Su H, Ji W.
    ACS Appl Mater Interfaces; 2024 Sep 04; 16(35):46570-46577. PubMed ID: 39167777
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  • 8. Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices.
    Zhou B.
    Nanoscale; 2020 Mar 05; 12(9):5533-5542. PubMed ID: 32091050
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  • 9. Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites.
    Kim M, Im J, Freeman AJ, Ihm J, Jin H.
    Proc Natl Acad Sci U S A; 2014 May 13; 111(19):6900-4. PubMed ID: 24785294
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  • 10. High-Throughput Inverse Design for 2D Ferroelectric Rashba Semiconductors.
    Chen J, Wu K, Hu W, Yang J.
    J Am Chem Soc; 2022 Nov 02; 144(43):20035-20046. PubMed ID: 36245133
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  • 11. Bipolar Rashba Semiconductors: A Class of Nonmagnetic Materials for Electrical Spin Manipulation.
    Fu X, Jia C, Sheng L, Li Q, Yang J, Li X.
    J Phys Chem Lett; 2023 Dec 21; 14(50):11292-11297. PubMed ID: 38063426
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  • 12. Switchable Rashba effect by dipole moment switching in an Ag2Te monolayer.
    Noor-A-Alam M, Lee M, Lee HJ, Choi K, Lee JH.
    J Phys Condens Matter; 2018 Sep 26; 30(38):385502. PubMed ID: 30095439
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  • 13. Atomic and Electronic Structure of a Multidomain GeTe Crystal.
    Frolov AS, Sánchez-Barriga J, Callaert C, Hadermann J, Fedorov AV, Usachov DY, Chaika AN, Walls BC, Zhussupbekov K, Shvets IV, Muntwiler M, Amati M, Gregoratti L, Varykhalov AY, Rader O, Yashina LV.
    ACS Nano; 2020 Dec 22; 14(12):16576-16589. PubMed ID: 33136362
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  • 14. Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe.
    Clark OJ, Wadgaonkar I, Freyse F, Springholz G, Battiato M, Sánchez-Barriga J.
    Adv Mater; 2022 Jun 22; 34(24):e2200323. PubMed ID: 35388556
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  • 16. Giant Rashba-type spin splitting in bulk BiTeI.
    Ishizaka K, Bahramy MS, Murakawa H, Sakano M, Shimojima T, Sonobe T, Koizumi K, Shin S, Miyahara H, Kimura A, Miyamoto K, Okuda T, Namatame H, Taniguchi M, Arita R, Nagaosa N, Kobayashi K, Murakami Y, Kumai R, Kaneko Y, Onose Y, Tokura Y.
    Nat Mater; 2011 Jun 19; 10(7):521-6. PubMed ID: 21685900
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  • 17. Hierarchical spin-orbital polarization of a giant Rashba system.
    Bawden L, Riley JM, Kim CH, Sankar R, Monkman EJ, Shai DE, Wei HI, Lochocki EB, Wells JW, Meevasana W, Kim TK, Hoesch M, Ohtsubo Y, Le Fèvre P, Fennie CJ, Shen KM, Chou F, King PD.
    Sci Adv; 2015 Sep 19; 1(8):e1500495. PubMed ID: 26601268
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  • 18. Manipulation of Rashba splitting and thermoelectric performance of MTe (M = Ge, Sn, Pb) via Te off-centering distortion.
    Wang T, Hu K, Duan X, Zhang J, Yang JY, Liu L.
    RSC Adv; 2022 Sep 16; 12(41):26514-26526. PubMed ID: 36275145
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  • 19. Rashba Effect in Functional Spintronic Devices.
    Koo HC, Kim SB, Kim H, Park TE, Choi JW, Kim KW, Go G, Oh JH, Lee DK, Park ES, Hong IS, Lee KJ.
    Adv Mater; 2020 Dec 16; 32(51):e2002117. PubMed ID: 32930418
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  • 20. Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy.
    Zribi J, Pierucci D, Bisti F, Zheng B, Avila J, Khalil L, Ernandes C, Chaste J, Oehler F, Pala M, Maroutian T, Hermes I, Lhuillier E, Pan A, Ouerghi A.
    Nanotechnology; 2022 Dec 01; 34(7):. PubMed ID: 36347029
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