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Journal Abstract Search

145 related items for PubMed ID: 38693077

  • 1. First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals Heterostructures.
    Wang J, Nikonov DE, Lin H, Kang D, Kim R, Li H, Klimeck G.
    Small; 2024 Aug; 20(33):e2308965. PubMed ID: 38693077
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  • 3. Robust Field-Free Switching Using Large Unconventional Spin-Orbit Torque in an All-Van der Waals Heterostructure.
    Zhang Y, Ren X, Liu R, Chen Z, Wu X, Pang J, Wang W, Lan G, Watanabe K, Taniguchi T, Shi Y, Yu G, Shao Q.
    Adv Mater; 2024 Oct; 36(41):e2406464. PubMed ID: 39140781
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  • 4. Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure.
    Shin I, Cho WJ, An ES, Park S, Jeong HW, Jang S, Baek WJ, Park SY, Yang DH, Seo JH, Kim GY, Ali MN, Choi SY, Lee HW, Kim JS, Kim SD, Lee GH.
    Adv Mater; 2022 Feb; 34(8):e2101730. PubMed ID: 34908193
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  • 5. Interfacial Modulation of Spin-Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3.
    Cao L, Chen Q, Zhu Y, Tong K, Li W, Ma J, Jalali M, Huang Z, Wu J, Zhai Y.
    ACS Appl Mater Interfaces; 2024 Apr 17; 16(15):19764-19770. PubMed ID: 38577833
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  • 6. Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators.
    Wang H, Wu H, Zhang J, Liu Y, Chen D, Pandey C, Yin J, Wei D, Lei N, Shi S, Lu H, Li P, Fert A, Wang KL, Nie T, Zhao W.
    Nat Commun; 2023 Aug 24; 14(1):5173. PubMed ID: 37620355
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  • 7. Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet.
    Choi GS, Park S, An ES, Bae J, Shin I, Kang BT, Won CJ, Cheong SW, Lee HW, Lee GH, Cho WJ, Kim JS.
    Adv Sci (Weinh); 2024 Jun 24; 11(21):e2400893. PubMed ID: 38520060
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  • 8. Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures.
    Lohmann M, Wickramaratne D, Moon J, Noyan M, Chuang HJ, Jonker BT, Li CH.
    ACS Nano; 2024 Jan 09; 18(1):680-690. PubMed ID: 38109771
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  • 16. Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories.
    Pan ZC, Li D, Ye XG, Chen Z, Chen ZH, Wang AQ, Tian M, Yao G, Liu K, Liao ZM.
    Sci Bull (Beijing); 2023 Nov 30; 68(22):2743-2749. PubMed ID: 37872061
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  • 17. Black phosphorene/monolayer transition-metal dichalcogenides as two dimensional van der Waals heterostructures: a first-principles study.
    You B, Wang X, Zheng Z, Mi W.
    Phys Chem Chem Phys; 2016 Mar 14; 18(10):7381-8. PubMed ID: 26899350
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  • 18. Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2.
    Kao IH, Muzzio R, Zhang H, Zhu M, Gobbo J, Yuan S, Weber D, Rao R, Li J, Edgar JH, Goldberger JE, Yan J, Mandrus DG, Hwang J, Cheng R, Katoch J, Singh S.
    Nat Mater; 2022 Sep 14; 21(9):1029-1034. PubMed ID: 35710631
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  • 19. Current-induced switching of a van der Waals ferromagnet at room temperature.
    Kajale SN, Nguyen T, Chao CA, Bono DC, Boonkird A, Li M, Sarkar D.
    Nat Commun; 2024 Feb 19; 15(1):1485. PubMed ID: 38374025
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  • 20. Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe2-Based 2D van der Waals Heterostructures.
    Xia Y, Zha J, Huang H, Wang H, Yang P, Zheng L, Zhang Z, Yang Z, Chen Y, Chan HP, Ho JC, Tan C.
    ACS Appl Mater Interfaces; 2023 Jul 26; 15(29):35196-35205. PubMed ID: 37459597
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