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PUBMED FOR HANDHELDS

Journal Abstract Search


130 related items for PubMed ID: 38884859

  • 21. Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms.
    Hoat DM, Ponce-Pérez R, Ha CV, Guerrero-Sanchez J.
    Nanoscale Adv; 2024 Jul 09; 6(14):3602-3611. PubMed ID: 38989525
    [Abstract] [Full Text] [Related]

  • 22. Effects of vacancy defects and atomic doping on the electronic and magnetic properties of puckered penta-like PdPSe monolayer: anAb initiostudy.
    Bafekry A, Faraji M, Abdolahzadeh Ziabari A, Javad Musavi S, Fadlallah MM, Ghergherehchi M, Soo Chang G.
    J Phys Condens Matter; 2024 Aug 08; 36(44):. PubMed ID: 39084639
    [Abstract] [Full Text] [Related]

  • 23. A novel 2D intrinsic metal-free ferromagnetic semiconductor Si3C8 monolayer.
    Luo Y, Li C, Zhong C, Li S.
    Phys Chem Chem Phys; 2024 Jan 03; 26(2):1086-1093. PubMed ID: 38098345
    [Abstract] [Full Text] [Related]

  • 24. Engineering the magnetic properties of PtSe2 monolayer through transition metal doping.
    Kar M, Sarkar R, Pal S, Sarkar P.
    J Phys Condens Matter; 2019 Apr 10; 31(14):145502. PubMed ID: 30650400
    [Abstract] [Full Text] [Related]

  • 25. First-principles study of the effect of doping on the optoelectronic properties of defective monolayers of MoSe2.
    Su D, Liu G, Ma M, Wei R, Mu Y, Yang Z, Zhang G.
    J Mol Model; 2024 Jan 09; 30(2):29. PubMed ID: 38194004
    [Abstract] [Full Text] [Related]

  • 26. Defect induced d(0) ferromagnetism in a ZnO grain boundary.
    Assa Aravindh SD, Schwingenschloegl U, Roqan IS.
    J Chem Phys; 2015 Dec 14; 143(22):224703. PubMed ID: 26671392
    [Abstract] [Full Text] [Related]

  • 27. Nitrogen doping and oxygen vacancy effects on the fundamental properties of BeO monolayer: a DFT study.
    Hoat DM, Nguyen DK, Guerrero-Sanchez J, Ponce-Pérez R, Rivas-Silva JF, Van On V, Cocoletzi GH.
    J Phys Condens Matter; 2021 Jun 24; 33(32):. PubMed ID: 34082415
    [Abstract] [Full Text] [Related]

  • 28. Tuning MoSO monolayer properties for optoelectronic and spintronic applications: effect of external strain, vacancies and doping.
    Nguyen DK, Guerrero-Sanchez J, Van On V, Rivas-Silva JF, Ponce-Pérez R, Cocoletzi GH, Hoat DM.
    RSC Adv; 2021 Oct 28; 11(56):35614-35623. PubMed ID: 35493147
    [Abstract] [Full Text] [Related]

  • 29. First-principles study of structure, electronic, and magnetic properties of C sites vacancy defects in water adsorbed graphene/MoS2 van der Waals heterostructures.
    Neupane HK, Adhikari NP.
    J Mol Model; 2021 Feb 12; 27(3):82. PubMed ID: 33580291
    [Abstract] [Full Text] [Related]

  • 30. Strain-tuned magnetism and half-metal to metal transition in defective BCN monolayer.
    Wang J, Kou L, Ni Y, Hu X.
    J Phys Condens Matter; 2021 May 11; 33(23):. PubMed ID: 33636712
    [Abstract] [Full Text] [Related]

  • 31. Structural, electronic and magnetic properties of V(2)O(5-x): An ab initio study.
    Xiao ZR, Guo GY.
    J Chem Phys; 2009 Jun 07; 130(21):214704. PubMed ID: 19508084
    [Abstract] [Full Text] [Related]

  • 32. Nanopatterning of Group V Elements for Tailoring the Electronic Properties of Semiconductors by Monolayer Doping.
    Thissen P, Cho K, Longo RC.
    ACS Appl Mater Interfaces; 2017 Jan 18; 9(2):1922-1928. PubMed ID: 27998054
    [Abstract] [Full Text] [Related]

  • 33. Designing doping strategy in arsenene monolayer for spintronic and optoelectronic applications: a case study of germanium and nitrogen as dopants.
    Van On V, Ha CV, Anh DT, Guerrero-Sanchez J, Hoat DM.
    J Phys Condens Matter; 2022 Jun 29; 34(35):. PubMed ID: 35724657
    [Abstract] [Full Text] [Related]

  • 34. Adsorption of Zn atoms by monolayer WS2 doped with different atoms X (X = O, Se, N, P, F, Cl): first principles study.
    Mu Y, Liu G, Su D, Yang Z, Zhang G.
    J Mol Model; 2024 Apr 24; 30(5):146. PubMed ID: 38656409
    [Abstract] [Full Text] [Related]

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  • 36. First-principles study of indium nitride monolayers doped with alkaline earth metals.
    Nguyen DK, Ha CV, Hong Gam LT, Guerrero-Sanchez J, Hoat DM.
    RSC Adv; 2023 Nov 16; 13(48):33634-33643. PubMed ID: 38020031
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  • 39. Massive Vacancy Concentration Yields Strong Room-Temperature Ferromagnetism in Two-Dimensional ZnO.
    Yin X, Wang Y, Jacobs R, Shi Y, Szlufarska I, Morgan D, Wang X.
    Nano Lett; 2019 Oct 09; 19(10):7085-7092. PubMed ID: 31524409
    [Abstract] [Full Text] [Related]

  • 40. Electronic, Magnetic, and Optical Properties of Metal Adsorbed g-ZnO Systems.
    Shen Y, Yuan Z, Cui Z, Ma D, Yang K, Dong Y, Wang F, Du A, Li E.
    Front Chem; 2022 Oct 09; 10():943902. PubMed ID: 35844655
    [Abstract] [Full Text] [Related]


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