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190 related items for PubMed ID: 38930290

  • 1. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.
    Feng ZC, Liu J, Xie D, Nafisa MT, Zhang C, Wan L, Jiang B, Lin HH, Qiu ZR, Lu W, Klein B, Ferguson IT, Liu S.
    Materials (Basel); 2024 Jun 14; 17(12):. PubMed ID: 38930290
    [Abstract] [Full Text] [Related]

  • 2. [Structural and optical characterization of ZnO thin films grown by plasma-assisted molecular beam epitaxy].
    Lan ZL, Zhang XQ, Yang GW, Sun J, Liu FJ, Huang HQ, Zhang R, Yin PG, Guo L, Song YC.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2008 Feb 14; 28(2):253-5. PubMed ID: 18478997
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  • 3. Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy.
    Susanto I, Liu HS, Ho YT, Yu IS.
    Nanomaterials (Basel); 2024 Apr 22; 14(8):. PubMed ID: 38668226
    [Abstract] [Full Text] [Related]

  • 4. Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy.
    Ramesh C, Tyagi P, Bera S, Gautam S, Subhedar KM, Senthil Kumar M, Kushvaha SS.
    J Nanosci Nanotechnol; 2020 Jun 01; 20(6):3929-3934. PubMed ID: 31748098
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  • 6. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.
    Poppitz D, Lotnyk A, Gerlach JW, Lenzner J, Grundmann M, Rauschenbach B.
    Micron; 2015 Jun 01; 73():1-8. PubMed ID: 25846303
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  • 8. Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy.
    Tyagi P, Ramesh C, Kushvaha SS, Gupta G, Senthil Kumar M.
    J Nanosci Nanotechnol; 2020 Jun 01; 20(6):3919-3924. PubMed ID: 31748096
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  • 10. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.
    Zhong A, Hane K.
    Nanoscale Res Lett; 2012 Dec 27; 7(1):686. PubMed ID: 23270331
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  • 12. Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy.
    Ramesh C, Pandey J, Tyagi P, Soni A, Senthil Kumar M, Kushvaha SS.
    J Nanosci Nanotechnol; 2020 Jun 01; 20(6):3866-3872. PubMed ID: 31748088
    [Abstract] [Full Text] [Related]

  • 13. Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd₂O₃ and Y₂O₃ on GaN.
    Chang WH, Wu SY, Lee CH, Lai TY, Lee YJ, Chang P, Hsu CH, Huang TS, Kwo JR, Hong M.
    ACS Appl Mater Interfaces; 2013 Feb 01; 5(4):1436-41. PubMed ID: 23360590
    [Abstract] [Full Text] [Related]

  • 14. Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100 °C Using Sequential Surface Reactions.
    Sprenger JK, Cavanagh AS, Sun H, Wahl KJ, Roshko A, George SM.
    Chem Mater; 2016 Feb 01; 28():. PubMed ID: 31092972
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  • 15. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
    Borysiuk J, Zytkiewicz ZR, Sobanska M, Wierzbicka A, Klosek K, Korona KP, Perkowska PS, Reszka A.
    Nanotechnology; 2014 Apr 04; 25(13):135610. PubMed ID: 24598248
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  • 18. Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil.
    Ramesh C, Tyagi P, Kaswan J, Yadav BS, Shukla AK, Senthil Kumar M, Kushvaha SS.
    RSC Adv; 2020 Jan 08; 10(4):2113-2122. PubMed ID: 35494595
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  • 19. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.
    Krishna S, Aggarwal N, Mishra M, Maurya KK, Singh S, Dilawar N, Nagarajan S, Gupta G.
    Phys Chem Chem Phys; 2016 Mar 21; 18(11):8005-14. PubMed ID: 26916430
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  • 20. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.
    Bolshakov AD, Mozharov AM, Sapunov GA, Shtrom IV, Sibirev NV, Fedorov VV, Ubyivovk EV, Tchernycheva M, Cirlin GE, Mukhin IS.
    Beilstein J Nanotechnol; 2018 Mar 21; 9():146-154. PubMed ID: 29441260
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