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Journal Abstract Search

116 related items for PubMed ID: 39051736

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  • 4. Record High-Proximity-Induced Anomalous Hall Effect in (BixSb1-x)2Te3 Thin Film Grown on CrGeTe3 Substrate.
    Yao X, Gao B, Han MG, Jain D, Moon J, Kim JW, Zhu Y, Cheong SW, Oh S.
    Nano Lett; 2019 Jul 10; 19(7):4567-4573. PubMed ID: 31185718
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  • 6. Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition.
    Tu NH, Tanabe Y, Satake Y, Huynh KK, Le PH, Matsushita SY, Tanigaki K.
    Nano Lett; 2017 Apr 12; 17(4):2354-2360. PubMed ID: 28337910
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  • 7. Quantum and classical magnetoresistance in ambipolar topological insulator transistors with gate-tunable bulk and surface conduction.
    Tian J, Chang C, Cao H, He K, Ma X, Xue Q, Chen YP.
    Sci Rep; 2014 May 07; 4():4859. PubMed ID: 24810663
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  • 9. Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators.
    Chang CZ, Zhang Z, Li K, Feng X, Zhang J, Guo M, Feng Y, Wang J, Wang LL, Ma XC, Chen X, Wang Y, He K, Xue QK.
    Nano Lett; 2015 Feb 11; 15(2):1090-4. PubMed ID: 25594485
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  • 12. Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3.
    Gultom P, Hsu CC, Lee MK, Su SH, Huang JC.
    Nanomaterials (Basel); 2024 Jan 11; 14(2):. PubMed ID: 38251122
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  • 16. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy.
    Liu L, Wen L, He F, Zhuo R, Pan D, Zhao J.
    Nanotechnology; 2023 Nov 24; 35(6):. PubMed ID: 37944189
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  • 17. Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings.
    Behner G, Jalil AR, Heffels D, Kölzer J, Moors K, Mertens J, Zimmermann E, Mussler G, Schüffelgen P, Lüth H, Grützmacher D, Schäpers T.
    Nano Lett; 2023 Jul 26; 23(14):6347-6353. PubMed ID: 37399545
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  • 18. Quantum confinement of the Dirac surface states in topological-insulator nanowires.
    Münning F, Breunig O, Legg HF, Roitsch S, Fan D, Rößler M, Rosch A, Ando Y.
    Nat Commun; 2021 Feb 15; 12(1):1038. PubMed ID: 33589609
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  • 19. Engineering Dirac electrons emergent on the surface of a topological insulator.
    Yoshimura Y, Kobayashi K, Ohtsuki T, Imura KI.
    Sci Technol Adv Mater; 2015 Feb 15; 16(1):014403. PubMed ID: 27877741
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  • 20. Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE.
    Jerng SK, Joo K, Kim Y, Yoon SM, Lee JH, Kim M, Kim JS, Yoon E, Chun SH, Kim YS.
    Nanoscale; 2013 Nov 07; 5(21):10618-22. PubMed ID: 24056725
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