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PUBMED FOR HANDHELDS

Journal Abstract Search


115 related items for PubMed ID: 39169700

  • 1. Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.
    Bradford J, Dewes BT, Shiffa M, Cottam ND, Rahman K, Cheng TS, Novikov SV, Makarovsky O, O'Shea JN, Beton PH, Lara-Avila S, Harknett J, Greenaway MT, Patanè A.
    Small; 2024 Oct; 20(40):e2404809. PubMed ID: 39169700
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  • 8. Layer-dependent nonlinear optical properties and stability of non-centrosymmetric modification in few-layer GaSe sheets.
    Jie W, Chen X, Li D, Xie L, Hui YY, Lau SP, Cui X, Hao J.
    Angew Chem Int Ed Engl; 2015 Jan 19; 54(4):1185-9. PubMed ID: 25469912
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  • 9. Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.
    Shiffa M, Dewes BT, Bradford J, Cottam ND, Cheng TS, Mellor CJ, Makarovskiy O, Rahman K, O'Shea JN, Beton PH, Novikov SV, Ben T, Gonzalez D, Xie J, Zhang L, Patanè A.
    Small; 2024 Feb 19; 20(7):e2305865. PubMed ID: 37798672
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  • 10. Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy.
    Yuan X, Tang L, Liu S, Wang P, Chen Z, Zhang C, Liu Y, Wang W, Zou Y, Liu C, Guo N, Zou J, Zhou P, Hu W, Xiu F.
    Nano Lett; 2015 May 13; 15(5):3571-7. PubMed ID: 25923041
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  • 12. Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy.
    Liu CW, Dai JJ, Wu SK, Diep NQ, Huynh SH, Mai TT, Wen HC, Yuan CT, Chou WC, Shen JL, Luc HH.
    Sci Rep; 2020 Jul 31; 10(1):12972. PubMed ID: 32737426
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  • 13. Ultra-weak interlayer coupling in two-dimensional gallium selenide.
    Longuinhos R, Ribeiro-Soares J.
    Phys Chem Chem Phys; 2016 Sep 14; 18(36):25401-25408. PubMed ID: 27722285
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  • 17. Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures.
    Heilmann M, Prikhodko AS, Hanke M, Sabelfeld A, Borgardt NI, Lopes JMJ.
    ACS Appl Mater Interfaces; 2020 Feb 19; 12(7):8897-8907. PubMed ID: 31971775
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  • 19. Exciton pumping across type-I gallium chalcogenide heterojunctions.
    Cai H, Kang J, Sahin H, Chen B, Suslu A, Wu K, Peeters F, Meng X, Tongay S.
    Nanotechnology; 2016 Feb 12; 27(6):065203. PubMed ID: 26759069
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