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Journal Abstract Search

139 related items for PubMed ID: 39244613

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  • 4. Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions.
    Dong J, Li X, Gurung G, Zhu M, Zhang P, Zheng F, Tsymbal EY, Zhang J.
    Phys Rev Lett; 2022 May 13; 128(19):197201. PubMed ID: 35622046
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  • 9. Anisotropic magnetoresistance in an antiferromagnetic semiconductor.
    Fina I, Marti X, Yi D, Liu J, Chu JH, Rayan-Serrao C, Suresha S, Shick AB, Zelezný J, Jungwirth T, Fontcuberta J, Ramesh R.
    Nat Commun; 2014 Sep 10; 5():4671. PubMed ID: 25204755
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  • 10. Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction.
    Qin P, Yan H, Wang X, Chen H, Meng Z, Dong J, Zhu M, Cai J, Feng Z, Zhou X, Liu L, Zhang T, Zeng Z, Zhang J, Jiang C, Liu Z.
    Nature; 2023 Jan 10; 613(7944):485-489. PubMed ID: 36653565
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  • 12. Néel Spin Currents in Antiferromagnets.
    Shao DF, Jiang YY, Ding J, Zhang SH, Wang ZA, Xiao RC, Gurung G, Lu WJ, Sun YP, Tsymbal EY.
    Phys Rev Lett; 2023 May 26; 130(21):216702. PubMed ID: 37295086
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  • 13. Room-Temperature Spin Filtering in Metallic Ferromagnet-Multilayer Graphene-Ferromagnet Junctions.
    Cobas ED, van 't Erve OM, Cheng SF, Culbertson JC, Jernigan GG, Bussman K, Jonker BT.
    ACS Nano; 2016 Nov 22; 10(11):10357-10365. PubMed ID: 27806204
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  • 15. Crossover from Kondo-assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers.
    Yang H, Yang SH, Parkin SS.
    Nano Lett; 2008 Jan 22; 8(1):340-4. PubMed ID: 18095740
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  • 16. Spin-dependent tunneling in magnetic tunnel junctions with a layered antiferromagnetic Cr(001) spacer: role of band structure and interface scattering.
    Nagahama T, Yuasa S, Tamura E, Suzuki Y.
    Phys Rev Lett; 2005 Aug 19; 95(8):086602. PubMed ID: 16196882
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  • 18. Observation of Spin-Splitter Torque in Collinear Antiferromagnetic RuO_{2}.
    Karube S, Tanaka T, Sugawara D, Kadoguchi N, Kohda M, Nitta J.
    Phys Rev Lett; 2022 Sep 23; 129(13):137201. PubMed ID: 36206408
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  • 19. Highly spin-polarized materials and devices for spintronics∗.
    Inomata K, Ikeda N, Tezuka N, Goto R, Sugimoto S, Wojcik M, Jedryka E.
    Sci Technol Adv Mater; 2008 Jan 23; 9(1):014101. PubMed ID: 27877927
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  • 20. Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.
    Wang YY, Song C, Cui B, Wang GY, Zeng F, Pan F.
    Phys Rev Lett; 2012 Sep 28; 109(13):137201. PubMed ID: 23030116
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