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Journal Abstract Search
118 related items for PubMed ID: 39283697
1. Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment. Zhang J, Zhao H, Ye X, Jia M, Lin G, Yang Z, Wang Y, Wei S, Lin Y, Sun Q, Zhama T, Yang W, Zeng Y. ACS Appl Mater Interfaces; 2024 Sep 25; 16(38):51010-51019. PubMed ID: 39283697 [Abstract] [Full Text] [Related]
9. Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors. Jeon SP, Heo JS, Kim I, Kim YH, Park SK. ACS Appl Mater Interfaces; 2020 Dec 30; 12(52):57996-58004. PubMed ID: 33332113 [Abstract] [Full Text] [Related]
10. High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer. Yen TJ, Chin A, Gritsenko V. Nanomaterials (Basel); 2020 Oct 28; 10(11):. PubMed ID: 33126463 [Abstract] [Full Text] [Related]
13. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack. Cho MH, Choi CH, Seul HJ, Cho HC, Jeong JK. ACS Appl Mater Interfaces; 2021 Apr 14; 13(14):16628-16640. PubMed ID: 33793185 [Abstract] [Full Text] [Related]
19. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability. Liu J, Guo J, Yang W, Wang C, Yuan B, Liu J, Wu Z, Zhang Q, Liu D, Chen H, Yu Y, Liu S, Shao G, Yao Z. ACS Appl Mater Interfaces; 2020 Sep 30; 12(39):43950-43957. PubMed ID: 32886486 [Abstract] [Full Text] [Related]
20. Suppression of Interfacial Disorders in Solution-Processed Metal Oxide Thin-Film Transistors by Mg Doping. Heo JS, Jeon SP, Kim I, Lee W, Kim YH, Park SK. ACS Appl Mater Interfaces; 2019 Dec 26; 11(51):48054-48061. PubMed ID: 31791119 [Abstract] [Full Text] [Related] Page: [Next] [New Search]