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Journal Abstract Search

140 related items for PubMed ID: 39355009

  • 21. Converse flexoelectricity yields large piezoresponse force microscopy signals in non-piezoelectric materials.
    Abdollahi A, Domingo N, Arias I, Catalan G.
    Nat Commun; 2019 Mar 20; 10(1):1266. PubMed ID: 30894544
    [Abstract] [Full Text] [Related]

  • 22. Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor.
    Sui F, Jin M, Zhang Y, Qi R, Wu YN, Huang R, Yue F, Chu J.
    Nat Commun; 2023 Jan 03; 14(1):36. PubMed ID: 36596789
    [Abstract] [Full Text] [Related]

  • 23. Topological Magnetic-Spin Textures in Two-Dimensional van der Waals Cr2Ge2Te6.
    Han MG, Garlow JA, Liu Y, Zhang H, Li J, DiMarzio D, Knight MW, Petrovic C, Jariwala D, Zhu Y.
    Nano Lett; 2019 Nov 13; 19(11):7859-7865. PubMed ID: 31661617
    [Abstract] [Full Text] [Related]

  • 24. Transmission Electron Microscope Nanosculpting of Topological Insulator Bismuth Selenide.
    Friedensen SE, Parkin WM, Mlack JT, Drndić M.
    ACS Nano; 2018 Jul 24; 12(7):6949-6955. PubMed ID: 29890079
    [Abstract] [Full Text] [Related]

  • 25. Two-dimensional antiferromagnetic topological insulators in KCuSe/NaMnBi van der Waals heterobilayers.
    Ma H, Li B, Zou X, Hu X, Dai Y, Huang B, Niu C.
    Phys Chem Chem Phys; 2022 Oct 19; 24(40):25036-25040. PubMed ID: 36218156
    [Abstract] [Full Text] [Related]

  • 26. 2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications.
    Wang S, Li Y, Ng A, Hu Q, Zhou Q, Li X, Liu H.
    Nanomaterials (Basel); 2020 Aug 22; 10(9):. PubMed ID: 32842700
    [Abstract] [Full Text] [Related]

  • 27. Indirect Interlayer Bonding in Graphene-Topological Insulator van der Waals Heterostructure: Giant Spin-Orbit Splitting of the Graphene Dirac States.
    Rajput S, Li YY, Weinert M, Li L.
    ACS Nano; 2016 Sep 27; 10(9):8450-6. PubMed ID: 27617796
    [Abstract] [Full Text] [Related]

  • 28. Lead-Free Piezoelectric Energy Harvester Based on 2D Bismuth Titanate.
    Kanneth Sivaraman S, Punathil Raman S, R K, Subair T, Abraham Sam S, U AK, Nair SS, Shaji S, Tiwary CS, Anantharaman MR.
    ACS Appl Mater Interfaces; 2023 Nov 28. PubMed ID: 38015950
    [Abstract] [Full Text] [Related]

  • 29. Low-temperature Raman fingerprints for few-quintuple layer topological insulator Bi2Se3 films epitaxied on GaAs.
    Eddrief M, Atkinson P, Etgens V, Jusserand B.
    Nanotechnology; 2014 Jun 20; 25(24):245701. PubMed ID: 24858014
    [Abstract] [Full Text] [Related]

  • 30. Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe_{3}GeTe_{2} Nanoflakes.
    Zheng G, Xie WQ, Albarakati S, Algarni M, Tan C, Wang Y, Peng J, Partridge J, Farrar L, Yi J, Xiong Y, Tian M, Zhao YJ, Wang L.
    Phys Rev Lett; 2020 Jul 24; 125(4):047202. PubMed ID: 32794802
    [Abstract] [Full Text] [Related]

  • 31. Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2.
    Deng Y, Xiang Z, Lei B, Zhu K, Mu H, Zhuo W, Hua X, Wang M, Wang Z, Wang G, Tian M, Chen X.
    Nano Lett; 2022 Dec 28; 22(24):9839-9846. PubMed ID: 36475695
    [Abstract] [Full Text] [Related]

  • 32. Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet.
    Seo J, An ES, Park T, Hwang SY, Kim GY, Song K, Noh WS, Kim JY, Choi GS, Choi M, Oh E, Watanabe K, Taniguchi T, Park J-, Jo YJ, Yeom HW, Choi SY, Shim JH, Kim JS.
    Nat Commun; 2021 May 14; 12(1):2844. PubMed ID: 33990589
    [Abstract] [Full Text] [Related]

  • 33. V2O5: A 2D van der Waals Oxide with Strong In-Plane Electrical and Optical Anisotropy.
    Sucharitakul S, Ye G, Lambrecht WRL, Bhandari C, Gross A, He R, Poelman H, Gao XPA.
    ACS Appl Mater Interfaces; 2017 Jul 19; 9(28):23949-23956. PubMed ID: 28677951
    [Abstract] [Full Text] [Related]

  • 34. Magnetizing topological surface states of Bi2Se3 with a CrI3 monolayer.
    Hou Y, Kim J, Wu R.
    Sci Adv; 2019 May 19; 5(5):eaaw1874. PubMed ID: 31172028
    [Abstract] [Full Text] [Related]

  • 35. Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE.
    Jerng SK, Joo K, Kim Y, Yoon SM, Lee JH, Kim M, Kim JS, Yoon E, Chun SH, Kim YS.
    Nanoscale; 2013 Nov 07; 5(21):10618-22. PubMed ID: 24056725
    [Abstract] [Full Text] [Related]

  • 36. Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric.
    You L, Zhang Y, Zhou S, Chaturvedi A, Morris SA, Liu F, Chang L, Ichinose D, Funakubo H, Hu W, Wu T, Liu Z, Dong S, Wang J.
    Sci Adv; 2019 Apr 07; 5(4):eaav3780. PubMed ID: 31016240
    [Abstract] [Full Text] [Related]

  • 37. Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators.
    Wang H, Wu H, Zhang J, Liu Y, Chen D, Pandey C, Yin J, Wei D, Lei N, Shi S, Lu H, Li P, Fert A, Wang KL, Nie T, Zhao W.
    Nat Commun; 2023 Aug 24; 14(1):5173. PubMed ID: 37620355
    [Abstract] [Full Text] [Related]

  • 38.
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  • 39. Thickness-Dependent In-Plane Polarization and Structural Phase Transition in van der Waals Ferroelectric CuInP2 S6.
    Deng J, Liu Y, Li M, Xu S, Lun Y, Lv P, Xia T, Gao P, Wang X, Hong J.
    Small; 2020 Jan 24; 16(1):e1904529. PubMed ID: 31793714
    [Abstract] [Full Text] [Related]

  • 40.
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