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Journal Abstract Search

127 related items for PubMed ID: 39404318

  • 1. Synergic Effect of N and Se Facilitates Photoelectric Performance in Co-Hyperdoped Silicon.
    Sun H, Liu X, Xu C, Xu L, Chen Y, Yang H, Yang X, Rao P, Sun S, Zhao L.
    Nanomaterials (Basel); 2024 Oct 02; 14(19):. PubMed ID: 39404318
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  • 3. High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon.
    Jin X, Sun Y, Wu Q, Jia Z, Huang S, Yao J, Huang H, Xu J.
    ACS Appl Mater Interfaces; 2019 Nov 13; 11(45):42385-42391. PubMed ID: 31612698
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  • 4. Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes.
    Zhang T, Liu B, Ahmad W, Xuan Y, Ying X, Liu Z, Chen Z, Li S.
    Nanoscale Res Lett; 2017 Sep 04; 12(1):522. PubMed ID: 28871559
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  • 6. Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water.
    Wang X, Du W, Jj Nivas J, Zhao B, Zhao X, Amoruso S.
    ACS Appl Mater Interfaces; 2024 Jan 17; 16(2):2921-2931. PubMed ID: 38172042
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  • 7. Extended infrared responses in Er/O-hyperdoped Si at room temperature.
    Zhang K, He J, He T, Li Q, Peng M, Guo J, Zhang T, Wang X, Wen H, Zhu H, Li N, Wang P, Dan Y, Hu W.
    Opt Lett; 2021 Oct 15; 46(20):5165-5168. PubMed ID: 34653142
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  • 9. Sub-bandgap photo-response of black silicon fabricated by femtosecond laser irradiation under water.
    Wang X, Du W, Lun Y, Zhao B, Zhao X.
    Opt Express; 2024 May 06; 32(10):18415-18429. PubMed ID: 38858997
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  • 10. Au-Hyperdoped Si Nanolayer: Laser Processing Techniques and Corresponding Material Properties.
    Kovalev M, Nastulyavichus A, Podlesnykh I, Stsepuro N, Pryakhina V, Greshnyakov E, Serdobintsev A, Gritsenko I, Khmelnitskii R, Kudryashov S.
    Materials (Basel); 2023 Jun 16; 16(12):. PubMed ID: 37374622
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  • 13. CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure.
    Liu B, Shen H, Zhang J, Chen D, Mao W.
    Nanotechnology; 2023 Mar 20; 34(23):. PubMed ID: 36857771
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  • 14. Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions.
    Hao LZ, Gao W, Liu YJ, Liu YM, Han ZD, Xue QZ, Zhu J.
    Phys Chem Chem Phys; 2016 Jan 14; 18(2):1131-9. PubMed ID: 26660712
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  • 16. Near-infrared photoresponse of femtosecond-laser processed Se-doped silicon n+ - n photodiodes.
    Du L, Wu Z, Li R, Tang F, Jiang Y.
    Opt Lett; 2016 Nov 01; 41(21):5031-5034. PubMed ID: 27805678
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  • 17. High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors.
    Zhang H, Zhang X, Liu C, Lee ST, Jie J.
    ACS Nano; 2016 May 24; 10(5):5113-22. PubMed ID: 27116332
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  • 18. Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids.
    Alwadai N, Mitra S, Hedhili MN, Alamoudi H, Xin B, Alaal N, Roqan IS.
    ACS Appl Mater Interfaces; 2021 Jul 21; 13(28):33335-33344. PubMed ID: 34236856
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  • 19. Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques.
    Limaye MV, Chen SC, Lee CY, Chen LY, Singh SB, Shao YC, Wang YF, Hsieh SH, Hsueh HC, Chiou JW, Chen CH, Jang LY, Cheng CL, Pong WF, Hu YF.
    Sci Rep; 2015 Jun 22; 5():11466. PubMed ID: 26098075
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  • 20. [Spectral Characteristics of Si Quantum Dots Embedded in SiN(x) Thin Films Prepared by Magnetron Co-Sputtering].
    Chen XB, Yang W, Duan LF, Zhang LY, Yang PZ, Song ZN.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2015 Jul 22; 35(7):1770-3. PubMed ID: 26717722
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